Direct Insight To Sram Array Devices In Advanced Finfet Nodes By Large Scale Ultra-Fast In-Situ Characterization

This work reports the application of an ultra-fast insitu characterization capability in SRAM array in advanced nodes. The methodology was tested in fully functional SRAM arrays in 14 nm and 7 nm FinFET nodes, allowing assessment of individual devices in the array and obtaining high sigma statistics. The technique benefits SRAM optimization, identification of yield detractors and reliability learning.