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Transmission electron microscopy study of extended defects in high dose He-implanted GaN after annealing at 450 °C

Bingsheng Li,Yuzhu Liu,Huiping Liu,Long Kang,Anli Xiong

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms（2019）

Cited 3|Views45
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Abstract
•Microstructure of extended defects in He-implanted GaN after 450 °C annealing was investigated.•Extended defects, such as dislocation loops, stacking faults, tangled dislocations, and He bubbles are visible.•Atomic structures of observed extended defects are investigated by high-resolution transmission electron microscopy.
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Key words
GaN,He ion implantation,Microstructure,Extended defects
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