Fabrication of High‐Voltage Flip Chip Deep Ultraviolet Light‐Emitting Diodes Using an Inclined Sidewalls Structure

Two types of high-voltage flip chip deep ultraviolet light emitting diodes (HV-FC DUV-LEDs) are constructed with 2 x 2 and 3 x 3 cells, respectively, in which each single cell is fabricated with inclined sidewalls covered by SiO2/Al. The simulation results suggest that the structure with inclined sidewalls is much favorable to extract the transverse magnetic-polarized lights. As a result, the light power as high as 145.7 mW is achieved in HV-FC DUV-LED constructed with 3 x 3 cells at 1000 mA.