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Depth profiling of dopant concentration and pyroelectric properties of LiNbO3 single crystals treated at high-temperature in the presence of metal ions

G. Suchaneck,U. V. Yakhnevych,A. Eydam,D. Yu. Sugak,I. I. Syvorotka, V. G. Haiduchok,S. B. Ubizskii,G. Gerlach

FERROELECTRICS（2019）

Cited 3|Views14
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Abstract
The dopant and pyroelectric coefficient depth profiles of LiNbO3 single crystals grown by Czochralski method were investigated. Doping was performed after crystal growth by thermal diffusion at elevated temperatures. Diffusion doping did not deteriorate the pyroelectric properties of the crystal.
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Key words
LiNbO3 single crystals,dopant diffusion depth profile,pyroelectric coefficient depth profile
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