Enhanced performance of vertical-structured InGaN micro-pixelated light-emitting-diode array fabricated using an ion implantation process.

In this Letter, a new approach to fabricating a high-efficiency vertical-structured InGaN micro-pixelated ligh-temitting diode (mu VLED) is presented. The high-resistivity selective areas are intentionally created in the n-GaN layer through a fluorine (F) ion-implantation process and then used as the electrical isolation regions for realizing a mu VLED array consisting of 25 x 25 pixels with a diameter of 10 mu m. The results prove that the dual-energy F- ion implantations not only can improve the uniformity of carrier distribution but also can effectively prevent current from leaking along the etched sidewalls, which in turn realize a more efficient carrier injection into the mesa area. More notably, the current-handling capability and corresponding optical output power density of the mu VLED array are substantially higher than those of conventional vertical-structured broad-area LEDs. A measured output light power density of the F- ion-implanted mu VLED array reaches a maximum value of 43 W cm(-2) at 3.06 kA cm(-2), before power saturation. The improved luminescence performances of the mu VLED array can be attributed to an effective ion-induced heat relaxation and associated lower junction temperature. (C) 2019 Optical Society of America