Vertical Ga2O3 Schottky Barrier Diodes With Guard Ring Formed by Nitrogen-Ion Implantation
international conference on indium phosphide and related materials(2019)
摘要
A guard ring (GR) was employed to improve the breakdown voltage (
${V}_{\text {br}}$
) of vertical Ga
2
O
3
Schottky barrier diodes (SBDs) with or without a field-plate (FP) by eliminating electric field concentration at the edges of anode and FP electrodes. The GR structure was formed by nitrogen (N)-ion implantation. Four types of vertical SBD structures with: 1) neither a GR nor a FP; 2) a GR; 3) a FP; and 4) both a GR and a FP were fabricated on the same substrate. The SBDs with a GR [structures 2) and 4)] showed larger
${V}_{\text {br}}$
values than their GR-free counterparts [structures 1) and 3)]. Considering the trade-off relationship between
${V}_{\text {br}}$
and specific on-resistance (
${R}_{\text {on}}$
), a
${V}_{\text {br}}/{R}_{\text {on}}$
combination of 1.43 kV/
$4.7~\text {m}\Omega \cdot \text {cm}^{2}$
for the GR/FP-SBD corresponds to one of the best balanced data for Ga
2
O
3
SBDs.
更多查看译文
关键词
Anodes,Substrates,Annealing,Rough surfaces,Surface roughness,Surface treatment,Surface morphology
AI 理解论文
溯源树
样例
生成溯源树,研究论文发展脉络
Chat Paper
正在生成论文摘要