A Self-Rectification and Quasi-Linear Analogue Memristor for Artificial Neural Networks
IEEE Electron Device Letters(2019)
摘要
A memristor with a bilayer electrolyte structure (Pt/C/NbO
x
/TiN) is proposed as a self-rectification and quasi-linear electronic synapse. The device shows self-rectifying analogue memristive behavior with > 10
6
rectification ratio, which can solve the sneak current problem in crossbar array without additional hardware burden. Under identical pulses in potentiation process, the device conductance is quasi-linearly changed with 9.16% nonlinearity. In addition, the conductance change rate of device is effectively tuned by altering amplitudes and frequencies of spike pulses. Benefiting from the quasi-linear conductance change characteristics, excellent classification accuracy (95.7%) is achieved for the application of handwritten digit classification with a two-layer perceptron based on MINST stimulation.
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关键词
Memristors,Synapses,Switches,Linearity,Voltage measurement,Resistance,Performance evaluation
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