A Two-Phase 2MHz DSD GaN Power Converter with Master-Slave AO2T Control for Direct 48V/1V DC-DC Conversion

2019 Symposium on VLSI Circuits(2019)

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摘要
This paper reports a GaN power converter that achieves direct 48V/1V DC-DC voltage conversion with a two-phase DSD architecture at 2MHz, pushing the minimum duty ratio to a record low level of 2.1%. The AO 2 T control with elastic ON-time modulator leads to significant improvement on transient response and voltage droop performance, compared to prior arts. A master phase mirror enables adaptive master-slave phase operation, accomplishing automatic phase current balancing for improved reliability. The converter achieves a peak efficiency of 85.4%, with an active die of 1.46mm 2 on 180nm HV BCD process.
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关键词
adaptive master-slave phase operation,DC-DC conversion,transient response,voltage droop performance,master phase mirror,DSD GaN power converter,automatic phase current,HV BCD process,frequency 2.0 MHz,size 180.0 nm,voltage 48.0 V,voltage 1.0 V,GaN
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