A 370-Fj/b, 0.0056 Mm2/dq, 4.8-Gb/s DQ Receiver for HBM3 with a Baud-Rate Self-Tracking Loop
2019 SYMPOSIUM ON VLSI CIRCUITS(2019)
Abstract
This paper presents a data (DQ) receiver for HBM3 with a self-tracking loop that tracks a phase skew between DQ and data strobe (DQS) due to a voltage or thermal drift. The selftracking loop achieves low power and small area by utilizing an analog-assisted baud-rate phase detector. The proposed pulse-to-charge (PC) phase detector (PD) converts the phase skew to a voltage difference and detects the phase skew from the voltage difference. An offset calibration scheme that can compensates for a mismatch of the PD is also proposed. The proposed calibration scheme operates without any additional sensing circuits by taking advantage of the write training of HBM* Fabricated in 65 nm CMOS, the DQ receiver shows a power efficiency of 370 fJ/b at 4.8 Gb/s and occupies 0.0056 mm 2 . The experimental results show that the DQ receiver operates without any performance degradation under a ± 10% supply variation.
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Key words
IIBM,memory interface,phase detector,forwarded-clock (FC) receiver and baud-rate CDR
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