A 5gb/s/pin 16gb LPDDR4/4X Reconfigurable SDRAM with Voltage-High Keeper and a Prediction-based Fast-tracking ZQ Calibration
2019 SYMPOSIUM ON VLSI CIRCUITS（2019）
Key words
voltage-high keeper,self-mode detection scheme,prediction-based fast-tracking ZQ algorithm,reconfigurable LVSTL,fast ZQ code searching,internal ZQ calibration,DRAM interface standards,class DRAM process,un-terminated load,2nd generation DRAM process,I/O supply voltage,VDDQ,legacy controller,PHY structure,controlled leakage current,PVT variation,driver strength,size 10.0 nm,storage capacity 16 Gbit,bit rate 3.2 Gbit/s
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