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Composition determination for quaternary III-V semiconductors by aberration-corrected STEM.

P Kükelhan,T Hepp,S Firoozabadi,A Beyer,K Volz

Ultramicroscopy（2019）

Cited 3|Views8
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Abstract
•Composition determination for quaternary III–V semiconductors with two elements on each sub lattice.•Single STEM image and complementary image simulations are used.•Capability of proposed method is explored in simulation study.•Good agreement of experimentally determined concentrations for (GaIn)(AsBi) with XRD results.
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Key words
Quantitative STEM,Quaternary III-V semiconductors,Composition determination,Image simulation
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