Visualization and investigation of the non-thermalized electrons in an InAs nanowire by scanning gate microscopy.
JOURNAL OF PHYSICS-CONDENSED MATTER(2019)
Abstract
We performed scanning gate microscopy measurements on an InAs nanowire at T = 4.2 K in an external magnetic field. We visualizeded non-thermalized electrons passed under narrow metallic contact. It was found that, for such kind of electrons, suppression of the weak antilocalization quantum correction occurs with a magnetic field at least three times smaller than the corresponding one measured for the whole electronic system of the wire.
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Key words
nanowire,scanning gate microscopy,nonlocal transport
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