Investigations on the Displacement Damage Dose Effects Induced by Heavy Ion Irradiation in Silicon PiN Photodiodes: Implications for Modeling and Simulation

Jonathan Riffaud,Marc Gaillardin,Melanie Raine,Martial Martinez, Daniel Peyre,Claude Marcandella,Olivier Duhamel,Thierry Lagutere,Nicolas Richard,Philippe Paillet

Nuclear instruments and methods in physics research Section B, Beam interactions with materials and atoms/Nuclear instruments & methods in physics research Section B, Beam interactions with materials and atoms（2019）

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摘要

In this paper, the displacement damage dose effects in PiN photodiodes is investigated using heavy ions experiments and numerical simulations realized thanks to Technology Computer Aided Design (TCAD) calculations. The parameter of interest is the dark current I-DARK delivered by the photodiode which evolves during the heavy ions irradiation. The main goal is to define a model which bridges the gap between the introduction of traps energy states localized in the Si bandgap and the electrical behavior (as dark current variation).

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关键词

Displacement damage dose,Dark current,Photodiode PiN,Traps energy levels,Heavy ions irradiation

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