Sputtering of Silicon Single Crystals under Irradiation with a Helium and Argon Ion Beam with an Average Energy of 1 keV

The peculiarities of the surface topography that arise as a result of the sputtering of Si single-crystal substrates of different orientations with sputtered thin films under irradiation with Ar + and He + ion beams with energies in a broad energy range are considered. It is shown that the modified-layer thickness depends significantly on the irradiation dose. The best surface homogeneity of a Si single crystal with different orientations can be reached under simultaneous irradiation with Ar + and He + ions in a ratio that is close to 1 : 1.