Temperature Dependent Lateral and Vertical Conduction Mechanisms in AlGaN/GaN HEMT on Thinned Silicon SubstrateLars Heuken,Muhammad Alshahed,Alessandro Ottaviani,Mohammed Alomari,Dirk Fahle,Michael Heuken,Joachim N. BurghartzJAPANESE JOURNAL OF APPLIED PHYSICS（2019）引用 3|浏览59AI 理解论文溯源树样例生成溯源树，研究论文发展脉络Chat Paper正在生成论文摘要
