Influence of La Doping on the Transport Properties of Bi 1 – x La x CuSeO Oxyselenides

The transport properties of p -type oxyselenides with the chemical composition Bi 1 – x La x CuSeO ( x = 0.02, 0.04, 0.06) are investigated. An analysis of the temperature dependences of the material resistivity and charge-carrier concentration and mobility show that the substitution of La 3+ for Bi 3+ ions increases the carrier concentration, presumably, due to the generation of holes as a result of the formation of bismuth vacancies with an increase in the degree of substitution.