Numerical simulations of hole carrier selective contacts in p-type c-Si solar cells

Paul Procel,Philipp Löper,Felice Crupi,Christophe Ballif,Andrea Ingenito

Solar Energy Materials and Solar Cells（2019）

引用 28|浏览17

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摘要

This work presents a systematic analysis of the transport mechanism and surface passivation of tunneling oxide (SiO2)/p-type poly-silicon (poly-Si(p)) junctions applied to p-type crystalline silicon (c-Si) solar cells by means of TCAD numerical simulations.

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关键词

Numerical simulations,p-type carrier selective contacts,Tunneling,Poly-silicon carbide

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