Modulating Metallic Conductive Filaments Via Bilayer Oxides In Resistive Switching Memory

Y. M. Sun,C. Song,J. Yin,L. L. Qiao,R. Wang,Z. Y. Wang,X. Z. Chen, S. Q. Yin,M. S. Saleem,H. Q. Wu, F. Zeng,F. Pan

APPLIED PHYSICS LETTERS（2019）

引用 44|浏览36

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摘要

Large fluctuations of key parameters in cation-based resistive random access memory (RRAM), which originate from stochastic growth of metallic conductive filaments, always impose a significant barrier to the practical application of memory devices. Here, we propose an ordinary bilayer oxide structure of Ag/TaOx/TaOy/Pt (x更多

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