Growth and characterization of InxGa1−xN (0 < x < 0.16) templates for controlled emissions from MQW

Mostafa Abdelhamid, J.G. Reynolds,N.A. El-Masry,S.M. Bedair

Journal of Crystal Growth（2019）

引用 14|浏览7

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摘要

•InGaN templates reveal a gradual relaxation mechanism with varying composition.•A combination of SIMS with PL can determine composition and relaxation.•Relaxation can be enhanced by a high density of dislocations in the substrate.•MQWs emission is controlled by varying the indium in the underlying InGaN template.

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关键词

A3. InGaN relaxation,A3. Metal Organic Chemical Vapor Deposition (MOCVD),A3. InGaN semibulk,A3. Multiple quantum wells (MQWs),A1. High resolution X-ray diffraction (HRXRD),B1. Nitrides

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Growth and characterization of InxGa1−xN (0 < x < 0.16) templates for controlled emissions from MQW

Growth and characterization of InxGa1−xN (0 < x < 0.16) templates for controlled emissions from MQW