Growth of TlBa$_{2}$Ca$_{2}$Cu$_{3}$O$_{9}$ Epitaxial Thin Films by Two-Step Method in Argon

TlBa2Ca2Cu3O9 (Tl-1223) films have promising applications due to their high critical temperature and strong magnetic flux pinning Nevertheless, the preparation of pure phase Tl-1223 film is still a challenge. We successfully fabricate Tl-1223 thin films on LaAlO3 (001) substrates using de magnetic sputtering and a post annealing two-step method in argon atmosphere. The crystallization temperature of Tl-1223 films in argon is reduced by 100 degrees C compared to that in oxygen. This greatly reduces the volatilization of Tl and improves the surface morphology of films. The lower annealing temperature can effectively improve the repeatability of the Tl-1223 film preparation. In addition, pure Tl-1223 phase can be obtained in a broad temperature zone, from 790 degrees C to 830 degrees C. In our study, the films show homogenous and dense surface morphology using the presented method. The best critical temperature of Tl-1223 films is characterized to be 110K, and the critical current J(c) (77K, 0T) is up to 2.13 x 10(6) A/cm(2).