Dual-Wavelength Operation Of Gasb-Based Diode Lasers With Asymmetric Coupled Quantum Wells
2019 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO)(2019)
摘要
The DBR diode lasers with asymmetric tunnel coupled quantum wells having built-in resonant second order nonlinearity were designed and fabricated. The devices can generate comparable power in two bands near 2 um separated by similar to 13 meV as required for intracavity difference frequency generation. (C) 2019 The Author(s)
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关键词
asymmetric coupled quantum wells,DBR diode lasers,asymmetric tunnel coupled quantum wells,resonant second order nonlinearity,comparable power,intracavity difference frequency generation,wavelength operation,GaSb-based diode lasers,electron volt energy 13.0 meV,GaSb
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