Search
ChatPaper
AI Writing
analysis
Analysis
编组
Open Data
more
More
RankingsMust ReadingJournal&ConferenceAI TRAI HistoryMaster Reading TreeXiaomai's Star TalentsTrajectoryTalentNDI TrackerOpenAI sign Language
VIPCreated with Sketch.

Experimental investigation and modeling of inversion carrier effective mobility in 4H-SiC trench MOSFETs

Katsuhiro Kutsuki,Yukihiko Watanabe,Yusuke Yamashita,Narumasa Soejima,Keita Kataoka,Toru Onishi,Kensaku Yamamoto,Hirokazu Fujiwara

Solid-State Electronics（2019）

Cited 6|Views14
No score
Abstract
•Investigation and modeling of channel mobility in SiC trench MOSFETs are performed.•Channel mobility needs to be evaluated with drift layer resistance removed.•Method for evaluating channel mobility of trench MOSFETs with drift layer is proposed.•Proposed carrier scattering mechanism is not affected by the plane orientation of SiC.
More
Translated text
Key words
SiC,MOSFET,Trench,Mobility,Carrier scattering
AI Read Science
Must-Reading Tree
Example
Generate MRT to find the research sequence of this paper
Chat Paper
Summary is being generated by the instructions you defined