A ${c}$ -Axis-Aligned Crystalline In-Ga-Zn Oxide FET With a Gate Length of 21 nm Suitable for Memory Applications

We fabricated a field-effect transistor (FET) with a gate length of 21 nm whose channel material is a c-axis-aligned crystalline In-Ga-Zn oxide (CAAC-IGZO). A CAAC-IGZO FET with a gate length of 21 nm has an extremely low off-state leakage current, a practical driving capability, and tolerance against high temperatures. CAAC-IGZO FETs enable low-power integrated circuits, such as logic and memory ...