Thermal SPICE Modeling of FinFET and BEOL Considering Frequency-Dependent Transient Response, 3-D Heat Flow, Boundary/Alloy Scattering, and Interfacial Thermal Resistance

IEEE Transactions on Electron Devices(2019)

引用 17|浏览10
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摘要
High device density and high power density intensify the self-heating effect in scaled FinFET circuits to degrade both device and back-end-of-line (BEOL) reliability. The boundary scattering in nanostructure, alloy scattering in SiGe, and interfacial thermal resistance (ITR) between different materials even worsen the self-heating. A modularized FinFET SPICE model consisting of distributed Rth-Cth...
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关键词
SPICE,FinFETs,Integrated circuit modeling,Thermal resistance,Heating systems,Transient analysis,Thermal conductivity
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