Controlling shape memory effects in NiTi thin films grown on Ru seed layer

Sensors and Actuators A: Physical(2019)

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摘要
•NiTi films (120 nm) sputtered on Ru seed layer at 325 °C show crystallization.•Smaller grain size prevents martensitic phase transition near room temperature.•Phase transition from austenite to R-phase is observed for studied NiTi thin films.
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关键词
NiTi thin films,Shape memory effect,Seed layer,X-ray diffraction
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