Site-Controlled Inas Quantum Dot For Hetero-Integration Of Single Photon Emitter

Young-Ho Ko,Won Seok Han,Kap-Joong Kim,Byung-Seok Choi,Kyu Young Kim,Je-Hyung Kim,Heeju Kim,Yudong Jang,Donghan Lee,Chun Ju Youn,Jong-Hoi Kim,Jung Jin Ju

2019 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO)（2019）

引用 0|浏览30

暂无评分

摘要

The site-controlled quantum dot was obtained for hetero-integration of single photon emitter with silicon photonic circuit and fiber optics. By using selective-area growth method, the InAs quantum dot was formed on the InP pyramid which showed single photon emission from 1100 to 1300 nm. The hetero-integrated structure was designed as InAs quantum dot on the silicon waveguides with high coupling efficiency and fabricated by micro-transfer technique. (c) 2019 The Author(s)

查看译文

关键词

single photon emitter,site-controlled quantum dot,silicon photonic circuit,fiber optics,selective-area growth method,single photon emission,site-controlled InAs quantum dot,microtransfer technique,coupling efficiency,silicon waveguides,InP pyramid,heterointegrated structure,wavelength 1100 nm to 1300.0 nm,InAs-InP-Si

AI 理解论文

溯源树

样例

生成溯源树，研究论文发展脉络

Chat Paper

正在生成论文摘要