The integration of Ga2O3 on SiC at room temperature by surface activated bonding method

The integration of Ga 2 O 3 on SiC is a promising method to reduce the self-heating of Ga 2 O 3 -based devices. The bonding with an average bonding energy of $\sim 2.31\mathrm {J} /\mathrm {m}^{\mathbf {2}}$ was achieved by surface activated bonding (SAB) using a Si-containing Ar ion beam at room temperature. The high-resolution STEM analysis was carried out to investigate the bonding mechanism. The analysis indicate $\mathrm {a}\sim 2.2$ nm amorphous SiC layer and $\sim 1.8$ nm amorphous Ga 2 O 3 layer with a slight diffusion at the interface, which should contributes the strong bonding. Same analyses were applied on the 473 K-annealed bonding interface and indicate that the interfacial layer shrank by $\sim 0.5$ nm after annealing, which may due to the further diffusion of Ga and Si.