Hydrogen barrier performance of sputtered La 2 O 3 films for InGaZnO thin-film transistor

We report the hydrogen barrier performance of sputtered La 2 O 3 thin films for the device stability of amorphous indium–gallium–zinc–oxide (a-IGZO) thin-film transistors (TFTs). Hydrogen acts as a shallow donor in a-IGZO films, which makes TFTs conductive, resulting in degradation of their on/off properties. Since hydrogen can be easily incorporated by external environments or post-processing, an appropriate hydrogen barrier is essential for enhancing device stability. La 2 O 3 , with its extreme electronegativity, can provide excellent hygroscopic characteristics. Because hydrogen exists in the form of –OH groups inside a-IGZO films, La 2 O 3 is expected to be a promising barrier material for preventing hydrogen incorporation. Therefore, we investigate the growth characteristics of sputtered La 2 O 3 thin films as hydrogen barrier layers, focusing on variations in growth rate, refractive index, and film stress, which depend on various process parameters, such as radio-frequency (RF) power, O 2 partial pressure, and substrate temperature during reactive magnetron sputtering. The effects of these parameters on hydrogen barrier properties are systematically investigated and correlated with the microstructures of La 2 O 3 films. The results demonstrate that La 2 O 3 films grown with low RF power and low O 2 partial pressure have an amorphous phase and provide excellent hydrogen barrier performance. We anticipate that these experimental results will help improve the environmental stability of a-IGZO TFTs.