Exploration of the Impact of Physical Integration Schemes on Soft Errors in 3D ICs Using Monte Carlo Simulation

The complex vertical structures of 2.5D/3D integrated circuits present new challenges for the simulation, experimentation, and analysis of soft errors. Each added layer of circuitry in vertically integrated technologies increases the requirement for interconnect metallization. The proximity of these metal layers to sensitive regions may result in materials-dependent responses to radiation. Monte-Carlo simulations offer flexibility and utility in exploring the impact of geometry and material selection on the resulting radiation response characteristics in 3D IC structures. As the fabrication and experimentation of such technologies at this point follows no universal standard or guidelines, various configuration possibilities are advantageously thus considered in order to minimize cost and waste. Simulations indicate important differences in relative responses to radiation effects; in the discussed parametrizations, copper and cobalt interconnects behave similarly, while tungsten interconnects exhibit better properties than ruthenium.