Enhanced uniformity of III-nitride nanowire arrays on bulk metallic glass and nanocrystalline substrates

Nanowires possess unique strain relieving properties making them compatible with a wide variety of substrates ranging from single crystalline semiconductors, amorphous ceramics, and polycrystal-line metals. Flexible metallic foils are particularly interesting substrates for nanowires for both flexible optoelectronics and high throughput manufacturing techniques. However, nanowires grown on polycrystalline metals exhibit grain-dependent morphologies. As an alternative route, the authors demonstrate the growth of highly uniform III-Nitride nanowires on bulk metallic glass (amorphous metal) and nanocrystalline Pt metal films using molecular beam epitaxy. Nanowire arrays on metallic glass substrates show uniformity over length scales >100 mu m. The quality of these nanowires is explored by photoluminescence spectroscopy. The electrical characteristics of individual nanowires are measured via conductive atomic force microscopy, and mesoscale light-emitting diodes (LEDs) are fabricated. Nanowires grown on nanocrystalline Pt films showed an increase in output power by a factor of up to 32, and an increase in the overall LED efficiency by up to 13x compared with simultaneously grown nanowire LEDs on bare Si. Published by the AVS.