Demonstration of High-Quality MBE HgCdTe on 8-Inch Wafers

High-quality mid-wave infrared (MWIR) double-layer heterojunction HgCdTe has been grown on 8-inch Si substrates using molecular beam epitaxy. We grew six 8-inch-diameter MWIR HgCdTe wafers on Si substrates and measured within-wafer and wafer-to-wafer variations of key parameters such as cutoff wavelength, HgCdTe thickness, macrodefect density including voids and microvoids, and arsenic doping uniformity. The results indicate that the growth was very successful and the process repeatable, well controlled, and ready for production.