Total Ionizing Dose Effect in LDMOS oxides and devices

T. Borel, S. Furic, E. Leduc,A. Michez,J. Boch,A. Touboul, B. Azais,S. Danzeca,L. Dusseau

IEEE Transactions on Nuclear Science（2019）

引用 12|浏览64

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摘要

Laterally diffused metal-oxide-semiconductors transistors PD-silicon on insulator 150-nm mixed technology from Microchip are irradiated with 60Co gamma rays. Those irradiations have revealed a high sensitivity of the LDnMOS and LDpMOS pointing out that the main sensitive parameter is the ON-resistance. In this paper, degradation mechanisms at play are investigated through TCAD simulation, and an e...

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关键词

Logic gates,Degradation,Electron traps,Total ionizing dose,Transistors,Integrated circuits

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