Electronic Structure Of A Monoatomic Cu2si Layer On A Si(111) Substrate

Fermi surfaces and band dispersion curves of a Cu2Si layer on Si(111), quasi-"5x5" were mapped by angle-resolved photoemission spectroscopy using synchrotron radiation. Two metallic bands were observed within the Si bulk band gap, which are likely assigned to the electronic bands of the Cu2Si layer. Additional bands were found in the Si bulk band gap that originate from the interactions between the substrate state and the Cu2Si states that have the p(z) character. The present research aims at investigating the changes in the electronic structure of an atomic layer when prepared on a substrate.