Lateral Mode Discrimination in Edge-Emitting Lasers with Spatially Modulated Facet Reflectance
Semiconductors(2019)
摘要
A post-growth technique aimed at spatial modification of facet reflectance of edge-emitting diode lasers has been proposed. It is based on the deposition of an anti-reflection coating and subsequent precise etching with a focused ion beam. The technique allowed suppressing of high-order lateral modes in 10 μm stripe lasers based on ten layers of InAs/InGaAs quantum dots.
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