Fundamental parameter model for quantification of total reflection X-ray fluorescence analysis

A new fundamental parameter model and calculation algorithm is presented for quantitative analysis for total reflection X-ray fluorescence analytical technique. The model takes into consideration the geometrical parameters of the measuring set-up, the energy distribution of the exciter X-ray beam and its incidence angle to the surface of the sample holder. The numerical solution of this new model results the concentration of the sample elements. The system of equations of the fundamental parameter model involves the mathematical description of the excitation process in the sample layer and in the sample holder. The theoretical calibration for the quantitative determination of the sample elements is based on the numerical comparison of the measured and calculated X-ray fluorescence signal of the pure silicon sample holder. For the numerical calculation computer code was created in order to solve numerically the model equations. The whole analytical procedure is a standard-free method. The theoretical model and the complete numerical calculation was tested experimentally with standard solutions of K, Sc, V, Mn, Co, Ni and Cu elements, which were dripped onto high purity silicon wafer and dried before measurement. This standard-free analytical procedure can be utilized in the semiconductor industry and in various total reflection X-ray fluorescence analysis performed for investigations of environmental samples, natural waters, geological substances, foods and drinks.