Released All-Porous-Silicon Microstructure For Spectrometer Applications
2018 CONFERENCE ON OPTOELECTRONIC AND MICROELECTRONIC MATERIALS AND DEVICES (COMMAD)（2018）
Abstract
All-porous-silicon microstructures have been released with in-situ controllable current density to achieve low residual stress and out-of-plane stress gradient in the porous silicon (PS) films. Optical transmission of large area released PS structures was investigated through both Fourier-transform infrared spectroscopy (FTIR) and modelling in the near infrared and mid infrared wavelength range.
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Key words
all-porous-silicon microstructure,low residual stress,out-of-plane stress gradient,spectrometer applications,porous silicon films,current density,Fourier-transform infrared spectroscopy,FTIR,optical transmission,PS structures,near infrared wavelength,mid infrared wavelength,Si
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