Features of Electrical and Photoelectric Properties of GaS(Yb) Monocrystals

The electrical and photoelectric properties of GaS(Yb) monocrystal have been studied in the range of 100-300 K. It has been established that as the partial compensation of structure defects (V-Ga) occurs due to the inclusion of ytterbium dopant, the electroconductivity of GaS monocrystal decreases. The simultaneously occurrence of substitution (Yb-Ga) of cation vacancy - V-Yb and Yb-Ga due to the formation of acceptor and donor type two charged local centers during the doping, leads to a self-compensating process. As a result, the specific resistance of the crystal increases, and thermal activation and extinction processes are observed in the temperature dependence of photoconductivity.