The modification of ultraviolet illumination to resistive switching behaviors in Ga 2 O 3 memory device
Journal of Materials Science: Materials in Electronics(2019)
摘要
The modulating resistive switching behaviors accompanied ultraviolet (UV) photo response phenomena are demonstrated by changing the UV light intensities in the Ti/Ga 2 O 3 /Pt memory device. The analysis of the photodecay processes indicate that the UV light can induce the photo-generated carriers and oxygen defects, affecting the Schottky barrier and the photodecay time. On the other hand, the photo-generated carriers and oxygen defects can decrease the Schottky barrier and benefit to the formation of multiple conducting filaments (CFs) under the electric field, effectively decreasing the forming and switching voltages. Meanwhile, the different UV light intensity can affect the CFs’ size, realizing the multilevel memory in the Ga 2 O 3 -based device.
更多查看译文
AI 理解论文
溯源树
样例
![](https://originalfileserver.aminer.cn/sys/aminer/pubs/mrt_preview.jpeg)
生成溯源树,研究论文发展脉络
Chat Paper
正在生成论文摘要