Evaluation of an InAs HEMT with Source-Connected Field Plate for High-Speed and Low-Power Logic Applications

Jing Neng Yao,Yueh Chin Lin, Min Song Lin,Ting Jui Huang,Heng Tung Hsu,Simon M. Sze,Edward Y. Chang

Solid-State Electronics（2019）

Cited 7|Views30

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Abstract

•We have edited the highlights as below and attached.•InAs HEMTs electrical performance improvement by SCFP.•SS of 76 mV/dec, DIBL of 44 mV/V, and Ion/Ioff of 2.4 × 104 were achieved.•A high off-state breakdown voltage was achieved.•fT and fMAX of 113 GHz were demonstrated.

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Key words

InAs,Field plate,Low power,HEMT

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