R8-xRu3In7+x, R3Ru1-xIn3, R39Ru12-xIn35, and R16Ru5In14 (R=La-Nd, Sm, Gd-Er, Lu) - New ternary indides with 2D intergrowth of CsCl- and AlB2-related slabs

Twelve rare-earth ruthenium indides were synthesized by a two-step reaction and their crystal structures were determined by single-crystal X-ray diffraction. R3Ru1-xIn3 (Pbam, oP28) and R16Ru5In14 (P2/m, mP35) crystallize with new structure types whereas R39Ru12-xIn35 (Pbam, oP172) and R8-xRu3In7+x (Pmma, oP36) present occupation variants of Nd39Ir10.98In36.02 and Y5Cu5Mg8 structures, respectively. The new indides are built of two different layers alternatively stacking along the shortest unit cell axis. The first layer is formed exclusively of rare-earth atoms while the second layer is built of ruthenium and indium thus displaying RIn and RRu fragments of CsCl type and RIn2 and RRu2 fragments of AlB2 type.