Automated Extraction Of Silicon Dioxide Thermal Conductivity Values Based On Electro-Thermal Simulations

An approach to extract the silicon dioxide thermal conductivity values is presented. A variety of metal resistor test structures are produced using a 0.25 mu m SiGe BiCMOS technology. Based on the measured temperature rise values an automated extraction method to optimize the thermal conductivity of silicon dioxide is developed. Electrical and thermal co-simulations were performed for the optimization using the aforementioned test structures. The optimized thermal conductivity values were added to the material stack-up file and embedded in the process design kit. The updated material stackup file allows designers to perform accurate computation of the metal structures and flip-chips. The maximum deviation of 8% between the electro-thermal simulations and the measurements is achieved.