Study of Microcrystals Distribution in Microcrystalline Silicon thin Films by Raman Spectroscopy

For mc-Si film was built a map of the crystallinity distribution parameter. An important factor in studying films - is their same amount of deposition on the substrate. It can be concluded that the installation KAI - 1-1200 has several features which prevent the uniform application of films. This distribution map helps account for these factors to find the optimal parameters of growth, that will compensate results of uneven distribution of the film.