The Study Of Contact Phenomena At The Interface Of Silicon - Cnt Array, Synthesized By Pecvd Method

In this work, we studied the influence of catalytic layers and silicon type on the electrophysical parameters of the silicon - CNT junction. The oriented CNT array was synthesized by catalytic plasma-induced deposition from a gas phase on a silicon substrate. The following metal pairs (Ti/Ni and TiN/Ni) were used as a catalyst for the synthesis of CNT arrays. Different thicknesses of catalytic layers were deposited on silicon substrates with different doping level and conductivity type. The parameters of the catalytic nanoparticles (size, distribution), arrays of CNTs (height, diameter of CNT) and current-voltage characteristic of structures were studied. During the study, the optimal parameters of the structure of silicon -CNT were determined, which can later be used in the formation of field emission devices.