Radiation Effects on High-Speed InGaAs Photodiodes

IEEE Transactions on Nuclear Science(2019)

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摘要
Photodiodes are important components in optical data links, and their performance degradation under irradiation has to be understood in order to guarantee the long-term functionality of the data links in radiation environments of high-energy physics experiments. Indium gallium arsenide (InGaAs) on indium phosphide (InP) photodiodes are attractive candidates for these applications, thanks to their ...
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关键词
Photodiodes,Indium gallium arsenide,Gallium arsenide,Protons,Sensitivity,Receivers,Radiation effects
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