An algorithm for the in situ analysis of optical reflectance anisotropy spectra

J. Ortega-Gallegos,A. Lastras-Martínez, L.E. Guevara-Macías, J.G. Santiago García,D. Ariza-Flores,R. Castro-García,R.E. López-Estopier,R.E. Balderas-Navarro, L.F. Lastras-Martínez

Journal of Crystal Growth（2019）

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摘要

•A fast algorithm for the study of reflectance anisotropy (RA) spectra is developed.•Detection of two fundamental components of RA spectra during GaAs homoepitaxy.•Application of RA spectroscopy to surface stoichiometry prior to homoepitaxy of GaAs.

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关键词

A1. Characterization,A1. Growth models,A1. Surface processes,A3. Molecular beam epitaxy,B2. Semiconducting gallium arsenide,B2. Semiconducting III-V materials

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