2.32 Kv Breakdown Voltage Lateral Beta-Ga2o3 Mosfets With Source-Connected Field Plate

We report on demonstrating high performance lateral beta-Ga2O3 metal-oxide-semiconductor field-effect transistors (MOSFETs) with source-connected field plate (FP) on a thin (150 nm) and highly Si-doped (n = 1.5 x 10(18) cm(-3)) beta-Ga2O3 epitaxial channel layer grown by ozone molecular beam epitaxy (MBE) on Fe-doped semi-insulating (010) substrate. For a MOSFET with a gate-drain spacing (L-gd) of 25 mu m, the three terminal off-state breakdown voltage (V-BR) tested in Fluorinert ambient reaches 2321 V. To the best of our knowledge, this is the first report of lateral beta-Ga2O3 MOSFET with high V-BR of more than 2 kV and the highest VBR attained among all the Ga2O3 MOSFETs. The breakdown voltages with different L-gd from 5-25 mu m ranged from 518-2321V, with a linear trend of increasing breakdown voltage for larger spacing lateral MOSFETs. Combining with high electrical performances and excellent material properties, source-connected FP lateral beta-Ga2O3 MOSFET implies its great potential for next generation high-voltage and high-power switching devices applications above 2 kV. (C) The Author(s) 2019. Published by ECS.