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高应变InxGa1-xAs薄膜的结晶质量及光学特性

Chinese Journal of Lasers(2019)

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Abstract
通过分子束外延 (MBE) 生长技术, 在GaAs (100) 基片上生长出单晶InxGa1-xAs薄膜, 利用反射高能电子衍射仪 (RHEED) 实时监控薄膜生长情况.对InxGa1-xAs薄膜进行了X射线衍射 (XRD) 测试, 结果显示该薄膜为高质量薄膜, 且In组分 (原子数分数) 为0.51.光致发光 (PL) 光谱测试结果表明, 室温下发光峰位约为1.55μm;由于InxGa1-xAs薄膜中存在压应变, 光谱峰位出现蓝移.Raman光谱显示GaAs-like横向光学声子 (TO) 模式的峰出现了明显展宽, 验证了InxGa1-xAs薄膜中存在应变.
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Key words
films, strain, Raman spectra, photoluminescence, molecular beam epitaxy, real-time detection
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