Interface Passivation Strategy for Ge PMOSFET from a TID Perspective
IEEE Transactions on Nuclear Science（2019）
Abstract
The interface quality between the gate dielectric and germanium (Ge) channel plays a crucial role for Ge MOSFETs. The impact of different interface passivation techniques on the total ionizing dose (TID) effect of Ge pMOSFET with enclosed-layout and Al2O3/TiN gate-stack is experimentally investigated under different bias conditions. The N-passivation and O-passivation of Ge pMOSFETs are realized b...
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Key words
Germanium,MOSFET circuits,Radiation effects,Logic gates,Passivation,Stress,Negative bias temperature instability
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