Sublattice reversal in GaAs/Ge/GaAs and AlAs/Ge/AlAs heterostructures grown on (1 1 3)A and (1 1 3)B GaAs substrates

Journal of Crystal Growth(2019)

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摘要
•Sublattice reversal from (1 1 3)B to (1 1 3)A was realized in GaAs/Ge/GaAs.•Sublattice reversal from (1 1 3)A to (1 1 3)B was realized in AlAs/Ge/AlAs.•Self-annihilation of antiphase domains was responsible for sublattice reversal.
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关键词
A3. Molecular beam epitaxy,A1. Sublattice reversal,B2. GaAs/Ge/GaAs,B2. AlAs/Ge/AlAs,A1. Heterostructures,B2. (1 1 3)A and (1 1 3)B GaAs
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