Oxidized Metal Schottky Contacts on (010) $\beta$ -Ga 2 O 3

Oxidized Ir, Pd, Pt, Ag and Au Schottky contacts (SCs) were fabricated on (010) β-Ga2O3 single crystal substrates via reactive RF sputtering using an O2: Ar plasma. The use of in situ oxidizing conditions resulted in SCs with very high rectifying barriers in excess of 2.0 eV for all the metals investigated, representing an increase of 0.4-0.9 eV compared with the corresponding plain metal versions...